RF4E100AJTCR

制造商 :

ROHM Semiconductor

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

10A (Ta)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

13 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

1460 pF @ 15 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-PowerUDFN

Power Dissipation (Max) :

2W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

12.4mOhm @ 10A, 4.5V

Supplier Device Package :

HUML2020L8

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±12V

Vgs(th) (Max) @ Id :

1.5V @ 1mA