RS1E321GNTB1

制造商 :

ROHM Semiconductor

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

32A (Ta), 80A (Tc)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

42.8 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

2850 pF @ 15 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

8-PowerTDFN

Power Dissipation (Max) :

3W (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

2.1mOhm @ 32A, 10V

Supplier Device Package :

8-HSOP

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 1mA