NTMYS011N04CTWG

制造商 :

onsemi

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

13A (Ta), 35A (Tc)

Drain to Source Voltage (Vdss) :

40 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

7.9 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

420 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

SOT-1023, 4-LFPAK

Power Dissipation (Max) :

3.8W (Ta), 28W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

12mOhm @ 10A, 10V

Supplier Device Package :

LFPAK4 (5x6)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.5V @ 20µA