TSM4ND65CI

制造商 :

Taiwan Semiconductor

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

4A (Tc)

Drain to Source Voltage (Vdss) :

650 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

16.8 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

596 pF @ 50 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-220-3 Full Pack, Isolated Tab

Power Dissipation (Max) :

41.6W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

2.6Ohm @ 1.2A, 10V

Supplier Device Package :

ITO-220

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

3.8V @ 250µA