SCT10N120

制造商 :

STMicroelectronics

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

12A (Tc)

Drain to Source Voltage (Vdss) :

1200 V

Drive Voltage (Max Rds On, Min Rds On) :

20V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

22 nC @ 20 V

Input Capacitance (Ciss) (Max) @ Vds :

290 pF @ 400 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 200°C (TJ)

Package / Case :

TO-247-3

Power Dissipation (Max) :

150W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

690mOhm @ 6A, 20V

Supplier Device Package :

HiP247™

Technology :

SiCFET (Silicon Carbide)

Vgs (Max) :

+25V, -10V

Vgs(th) (Max) @ Id :

3.5V @ 250µA