SSM5H08TU,LF

制造商 :

Toshiba Electronic Devices and Storage Corporation

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

1.5A (Ta)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

2.5V, 4V

FET Feature :

Schottky Diode (Isolated)

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

125 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C

Package / Case :

6-SMD (5 Leads), Flat Lead

Power Dissipation (Max) :

500mW (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

160mOhm @ 750mA, 4V

Supplier Device Package :

UFV

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±12V

Vgs(th) (Max) @ Id :

1.1V @ 100µA