IPN50R1K4CEATMA1

制造商 :

Infineon Technologies

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

4.8A (Tc)

Drain to Source Voltage (Vdss) :

500 V

Drive Voltage (Max Rds On, Min Rds On) :

13V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

8.2 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

178 pF @ 100 V

Mounting Type :

Surface Mount

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

TO-261-4, TO-261AA

Power Dissipation (Max) :

5W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

1.4Ohm @ 900mA, 13V

Supplier Device Package :

PG-SOT223-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.5V @ 70µA