SIB4317EDK-T1-GE3

制造商 :

Vishay

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

4.3A (Ta), 4.5A (Tc)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

2.5V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

23 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

600 pF @ 15 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

PowerPAK® SC-75-6

Power Dissipation (Max) :

1.95W (Ta), 10W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

65mOhm @ 3A, 10V

Supplier Device Package :

PowerPAK® SC-75-6

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±12V

Vgs(th) (Max) @ Id :

1.3V @ 250µA