RTF016N05FRATL

制造商 :

ROHM Semiconductor

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

1.6A (Ta)

Drain to Source Voltage (Vdss) :

45 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

2.3 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

150 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C

Package / Case :

3-SMD, Flat Leads

Power Dissipation (Max) :

800mW

Product Status :

Active

Rds On (Max) @ Id, Vgs :

190mOhm @ 1.6A, 4.5V

Supplier Device Package :

TUMT3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±12V

Vgs(th) (Max) @ Id :

1.5V @ 1mA