FDZ3N513ZT

制造商 :

Fairchild Semiconductor

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

1.1A

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

Schottky Diode (Isolated)

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

1 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

85 pF @ 15 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 125°C (TJ)

Package / Case :

4-XFBGA, WLCSP

Power Dissipation (Max) :

1W (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

462mOhm @ 300mA, 4.5V

Supplier Device Package :

4-WLCSP (1x1)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

+5.5V, -300mV

Vgs(th) (Max) @ Id :

1.5V @ 250µA