TSM650P03CX RFG

制造商 :

Taiwan Semiconductor

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

4.1A (Tc)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

2.5V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

6.4 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

810 pF @ 15 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power Dissipation (Max) :

1.56W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

65mOhm @ 4A, 10V

Supplier Device Package :

SOT-23

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±12V

Vgs(th) (Max) @ Id :

900mV @ 250µA