2SJ650

制造商 :

onsemi

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

12A (Ta)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

21 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

1020 pF @ 20 V

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-220-3 Full Pack

Power Dissipation (Max) :

2W (Ta), 20W (Tc)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

135mOhm @ 6A, 10V

Supplier Device Package :

TO-220ML

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

-

Vgs(th) (Max) @ Id :

-