R6000ENHTB1

制造商 :

ROHM Semiconductor

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

500mA (Ta)

Drain to Source Voltage (Vdss) :

600 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

4.3 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

45 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C

Power Dissipation (Max) :

2W (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

8.8Ohm @ 200mA, 10V

Supplier Device Package :

8-SOP

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

5V @ 1mA