FDG361N

制造商 :

Fairchild Semiconductor

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

600mA (Ta)

Drain to Source Voltage (Vdss) :

100 V

Drive Voltage (Max Rds On, Min Rds On) :

6V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

5 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

153 pF @ 50 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

6-TSSOP, SC-88, SOT-363

Power Dissipation (Max) :

420mW (Ta)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

500mOhm @ 600mA, 10V

Supplier Device Package :

SC-88 (SC-70-6)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA