HGTD8P50G1S

制造商 :

Harris Corporation

产品分类 :

晶体管 - IGBT - 单

Current - Collector (Ic) (Max) :

12 A

Current - Collector Pulsed (Icm) :

18 A

Gate Charge :

30 nC

IGBT Type :

-

Input Type :

Standard

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power - Max :

66 W

Product Status :

Active

Reverse Recovery Time (trr) :

-

Supplier Device Package :

TO-252AA

Switching Energy :

-

Td (on/off) @ 25°C :

-

Test Condition :

-

Vce(on) (Max) @ Vge, Ic :

2.9V @ 15V, 3A

Voltage - Collector Emitter Breakdown (Max) :

500 V