HGT1S12N60B3DS

制造商 :

Harris Corporation

产品分类 :

晶体管 - IGBT - 单

Current - Collector (Ic) (Max) :

27 A

Current - Collector Pulsed (Icm) :

110 A

Gate Charge :

78 nC

IGBT Type :

-

Input Type :

Standard

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Power - Max :

104 W

Product Status :

Active

Reverse Recovery Time (trr) :

-

Supplier Device Package :

TO-263AB

Switching Energy :

304µJ (on), 250µJ (off)

Td (on/off) @ 25°C :

26ns/150ns

Test Condition :

480V, 12A, 25Ohm, 15V

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 12A

Voltage - Collector Emitter Breakdown (Max) :

600 V