HGTD10N50F1

制造商 :

Harris Corporation

产品分类 :

晶体管 - IGBT - 单

Current - Collector (Ic) (Max) :

12 A

Current - Collector Pulsed (Icm) :

-

Gate Charge :

13.4 nC

IGBT Type :

-

Input Type :

Standard

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Power - Max :

75 W

Product Status :

Active

Reverse Recovery Time (trr) :

-

Supplier Device Package :

I-PAK

Switching Energy :

-

Td (on/off) @ 25°C :

-

Test Condition :

-

Vce(on) (Max) @ Vge, Ic :

2.5V @ 10V, 5A

Voltage - Collector Emitter Breakdown (Max) :

500 V