HGT1S10N120BNST

制造商 :

onsemi

产品分类 :

晶体管 - IGBT - 单

Current - Collector (Ic) (Max) :

35 A

Current - Collector Pulsed (Icm) :

80 A

Gate Charge :

100 nC

IGBT Type :

NPT

Input Type :

Standard

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Power - Max :

298 W

Product Status :

Active

Reverse Recovery Time (trr) :

-

Supplier Device Package :

D²PAK (TO-263)

Switching Energy :

320µJ (on), 800µJ (off)

Td (on/off) @ 25°C :

23ns/165ns

Test Condition :

960V, 10A, 10Ohm, 15V

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 10A

Voltage - Collector Emitter Breakdown (Max) :

1200 V