HGT1S20N60A4S9A

制造商 :

onsemi

产品分类 :

晶体管 - IGBT - 单

Current - Collector (Ic) (Max) :

70 A

Current - Collector Pulsed (Icm) :

280 A

Gate Charge :

142 nC

IGBT Type :

-

Input Type :

Standard

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Power - Max :

290 W

Product Status :

Obsolete

Reverse Recovery Time (trr) :

-

Supplier Device Package :

D²PAK (TO-263)

Switching Energy :

105µJ (on), 150µJ (off)

Td (on/off) @ 25°C :

15ns/73ns

Test Condition :

390V, 20A, 3Ohm, 15V

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 20A

Voltage - Collector Emitter Breakdown (Max) :

600 V