NGTB10N60R2DT4G

制造商 :

onsemi

产品分类 :

晶体管 - IGBT - 单

Current - Collector (Ic) (Max) :

20 A

Current - Collector Pulsed (Icm) :

40 A

Gate Charge :

53 nC

IGBT Type :

-

Input Type :

Standard

Mounting Type :

Surface Mount

Operating Temperature :

175°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power - Max :

72 W

Product Status :

Obsolete

Reverse Recovery Time (trr) :

90 ns

Supplier Device Package :

DPAK

Switching Energy :

412µJ (on), 140µJ (off)

Td (on/off) @ 25°C :

48ns/120ns

Test Condition :

300V, 10A, 30Ohm, 15V

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 10A

Voltage - Collector Emitter Breakdown (Max) :

600 V