CY10E422-7DC

制造商 :

Infineon Technologies

产品分类 :

记忆

Access Time :

7 ns

Clock Frequency :

-

Memory Format :

SRAM

Memory Interface :

Parallel

Memory Size :

1Kb (256 x 4)

Memory Type :

Volatile

Mounting Type :

Through Hole

Operating Temperature :

0°C ~ 70°C (TA)

Product Status :

Active

Supplier Device Package :

24-SBDIP

Technology :

SRAM - Asynchronous

Voltage - Supply :

4.94V ~ 5.46V

Write Cycle Time - Word, Page :

7ns