6116LA70TDB

制造商 :

Renesas Electronics Corporation

产品分类 :

记忆

Access Time :

70 ns

Clock Frequency :

-

Memory Format :

SRAM

Memory Interface :

Parallel

Memory Size :

16Kb (2K x 8)

Memory Type :

Volatile

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 125°C (TA)

Product Status :

Active

Supplier Device Package :

24-CDIP

Technology :

SRAM - Asynchronous

Voltage - Supply :

4.5V ~ 5.5V

Write Cycle Time - Word, Page :

70ns